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| SFH 313 SFH 313 FA . eu: NPN-Silizium-Fototransistor N New: Silicon NPN Phototransistor SFH 313 SFH 313 FA Area not flat 0.6 0.4 2.54 mm spacing 0.8 0.4 9.0 8.2 7.8 7.5 o5.1 o4.8 5.9 5.5 1.8 1.2 29 27 Cathode (Diode) Collector (Transistor) Approx. weight 0.5 g 5.7 5.1 Chip position 0.6 0.4 GEX06260 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Features q Especially suitable for applications from Bereich von 460 nm bis 1080 nm (SFH 313) und bei 880 nm (SFH 313 FA) q Hohe Linearitat q 5 mm-Plastikbauform Anwendungen q Computer-Blitzlichtgerate q Lichtschranken fur Gleich- und 460 nm to 1080 nm (SFH 313) and of 880 nm (SFH 313 FA) q High linearity q 5 mm plastic package Applications q q q q Wechsellichtbetrieb q Industrieelektronik q "Messen/Steuern/Regeln" Computer-controlled flashes Photointerrupters Industrial electronics For control and drive circuits Semiconductor Group 1 1997-11-27 fexf6626 fex06626 SFH 313 SFH 313 FA Typ Type SFH 313 SFH 313-2 SFH 313-3 SFH 313 FA SFH 313 FA-2 SFH 313 FA-3 Bestellnummer Ordering Code Q62702-P1667 Q62702-P1751 Q62702-P1752 Q62702-P1674 Q62702-P1753 Q62702-P1754 Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur bei Tauchlotung Lotstelle 2 mm vom Gehause, Lotzeit t 5 s Dip soldering temperature 2 mm distance from case bottom, soldering time t 5 s Lottemperatur bei Kolbenlotung Lotstelle 2 mm vom Gehause, Lotzeit t 3 s Iron soldering temperature 2 mm distance from case bottom t 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, < 10 s Collector surge current Emitter-Kollektorspannung Emitter-collector voltage Verlustleistung, TA = 25 C Total power dissipation Warmewiderstand Thermal resistance Symbol Symbol Wert Value - 55 ... + 100 260 Einheit Unit C C Top; Tstg TS TS 300 C VCE IC ICS VEC Ptot RthJA 70 50 100 7 200 375 V mA mA V mW K/W Semiconductor Group 2 1997-11-27 SFH 313 SFH 313 FA Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Description Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der Chipflache Dimensions of chip area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Kapazitat, VCE = 0 V, f = 1 MHz, E = 0 Capacitance Dunkelstrom Dark current VCE = 10 V, E = 0 Fotostrom Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCE = 5 V Symbol Symbol SFH 313 S max 850 Wert Value SFH 313 FA 870 nm Einheit Unit 460 ... 1080 740 ... 1080 nm A LxB LxW H 0.55 1x1 5.1 ... 5.7 0.55 1x1 5.1 ... 5.7 mm2 mm x mm mm 10 15 10 ( 200) 10 15 10 ( 200) Grad deg. pF nA CCE ICEO IPCE IPCE 2.5 30 2.5 - mA mA Semiconductor Group 3 1997-11-27 SFH 313 SFH 313 FA Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Description Fotostrom, = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-EmitterSattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3, Ee = 0.5 mW/cm2 1) 1) Symbol -1 -2 Wert Value -3 -4 Einheit Unit IPCE tr, tf 2.5 ... 5 8 4 ... 8 10 6.3 ... 12.5 10 12 14 mA s VCEsat 150 150 150 150 mV IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe IPCEmin is the min. photocurrent of the specified group Directional characteristics Srel = f () 40 30 20 10 0 1.0 OHF02330 50 0.8 60 0.6 70 0.4 80 90 0.2 0 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Semiconductor Group 4 1997-11-27 SFH 313 SFH 313 FA TA = 25 C, = 950 nm Rel.spectral sensitivity SFH 313, Srel = f () 100 OHF02332 Rel.spectr.sensitivity SFH 313FA, Srel= f() Dark current, ICEO = f (VCE), E = 0 100 OHF02331 S rel % 80 70 60 50 40 30 20 10 0 400 500 600 700 800 900 nm 1100 S rel % 80 70 60 50 40 30 20 10 0 CEO 10 2 nA OHF02341 10 1 10 0 10 -1 10 -2 400 500 600 700 800 900 nm 1100 0 10 20 30 40 50 V 70 V CE Photocurrent IPCE = f (TA), VCE = 5 V, normalized to 25oC PCE 25 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -25 Photocurrent IPCE = f (Ee), VCE = 5 V OHF01524 Collector-emitter capacitance CCE = f (VCE), f = 1 MHz OHF02337 PCE 1.6 PCE 10 2 mA 50 OHF02344 C CE pF 40 10 1 30 10 0 20 10 -1 10 0 25 50 75 C 100 TA 10 -2 -3 10 10 -2 mW/cm 2 Ee 10 0 0 -2 10 10 -1 10 0 10 1 V 10 2 VCE Photocurrent IPCE= f (VCE) E = parameter PCE 10 2 mA mW cm 2 0.5 10 1 OHF02336 Dark current ICEO = f (TA), VCE = 10 V, E = 0 CEO 10 2 nA OHF02342 Total power dissipation Ptot = f (TA) 250 mW 200 OHF02340 Ptot 1 10 1 mW cm 2 0.25 mW cm 2 mW 0.1 2 cm 150 10 0 100 10 -1 50 10 0 10 -2 0 10 20 30 40 50 V 70 VCE 0 20 40 60 80 C 100 TA 0 0 20 40 60 80 C 100 TA Semiconductor Group 5 1997-11-27 |
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